Design and Characterization of a Built-In CMOS TID Smart Sensor

This paper describes a total ionization dose (TID) sensor that presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits; it has a configurable sensitivity that allows radiation doses ranging from very low to high levels; its interface helps to integrate this design in a multidisciplinary sensor network; and it is self-timed, hence it does not need a clock signal. We designed, implemented and manufactured the sensor in a 0.35 μm CMOS commercial technology. It was irradiated with a
⁶⁰
Co source. This test was used to characterize the sensor in terms of the radiation response up to 575 krad. After irradiation, we monitored the sensor to control charge redistribution and annealing effects for 80 hours. We also exposed our design to meticulous temperature analysis from 0 to 50
^°
C and we studied the acceleration on the annealing phenomena due to high temperatures. Sensor calibration takes into account the results of all tests. Finally we propose to use this sensor in a self-recovery system. The sensor manufactured in this work has an area of 0.047 mm
²
, of which 22% is dedicated to measuring radiation. Its energy per conversion is 463 pJ.