Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

A simple analytical model of thin-body In
_0.53
Ga
_0.47
As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental C
_G
-V
_gs
and I
_d
-V
_gs
curves collected on transistors with body thicknesses down to 5 nm.