New insights in Z2-FET mechanisms at variable temperature

The Z
²
-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching device with zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD) protection of Fully Depleted SOI (FDSOI) circuits. We study the impact of low and high temperature on the device performance, showing its effect on the output characteristics, triggering voltage (V
_on
) and leakage current (I
_Leak
).