Analytical approach to consider Gaussian junction profiles in compact models of tunnel-FETs

The impact of Gaussian-shaped doping-profiles on the potential and the current transfer characteristics of an Double-Gate (DG) Tunnel-FET (TFET) is investigated in this paper. Based on results of the analysis, a simple model by solving Poisson's equation is developed. The model is able to calculate the potential difference in the channel region caused by the applied doping gradient. Considering the modifications in the two-dimensional (2D) potential profile the band-to-band (B2B) and trap-assisted-tunneling (TAT) current are calculated with help of Wentzel-Kramers-Brillouin (WKB) approximation and Landauer transmission theory. The results are validated by comparison with TCAD simulation data.