A novel Triple-RESURF SON LDMOS and its analytical model

A novel high voltage Triple-RESRUF Silicon-On-Nothing (SON) LDMOS is proposed for the first time in this paper. The LDMOS is characterized by an air layer instead of buried oxide layer in SOI (Silicon-On-Insulator) LDMOS. Owing to the low permittivity of air, the vertical electric field in the dielectric layer is enhanced, contributing to the improvement of breakdown voltage (BV). The numerical results show that BV of Triple-RESURF SON LDMOS increases by 132% due to the increase of vertical electric field by 171%. An analytical model of Triple-RESURF SON LDMOS is presented and shows a fair agreement with the numerical results.