A novel high step-up multilevel boost converter using double voltage-lift switched-inductor cell

In this paper a novel high step-up multilevel boost converter using double voltage-lift switched-inductor (D-VLSI) cell is proposed. Series connection of conventional DC-DC boost converter is not a proper solution to achieve high voltage gain. Thus, DC-DC multilevel converters are employed to achieve high voltage gain. The proposed high step-up multilevel boost converter is a combination of double voltage-lift switched-inductor (D-VLSI) cell and voltage multiplier cell. In this paper double voltage-lift switched-inductor (D-VLSI) cell is used to enhance the step-up capability of multilevel DC-DC converter. Two switches, 2N+3 diodes, 2N+1 capacitor and two inductors are required to design the proposed N-level high step-up multilevel boost converter topology. Proposed high step-up multilevel converter circuit can be designed by using low voltage rating devices because blocking voltage across each power devices is low. The main advantage of proposed converter circuit is high voltage is achieved without using transformer, coupled inductor and high duty cycle. The gain of proposed multilevel converter is depends upon the duty ratio and levels present in voltage multiplier cell. Proposed DC-DC converter is designed for unidirectional power transfer applications. The proposed high step-up multilevel converter has been designed for three levels with rated power 300W, output voltage is 324V, input supply voltage is 12V, and switching frequency is 50kHz. The proposed high step-up multilevel converter circuit is simulated in MATLAB/SEVIULINK.