High-performance III–V devices for future logic applications

High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich In
_x
Ga
_1-x
As is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.