Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects

We report the first silicon integrated graphene optical electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge) optical modulators for future chip-level optical interconnect application.