9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS

9.74-THz fundamental electronic detection of Far-Infrared (FIR) radiation is demonstrated. The detection along with that at 4.92THz was realized using Schottky-barrier diode detection structures formed without any process modifications in CMOS. Peak optical responsivity (R
_v
) of 383 and ~14V/W at 4.92 and 9.74THz have been measured. The R
_v
at 9.74THz is 14X of that for the previously reported highest frequency electronic detection. The shot noise limited NEP at 4.92 and 9.74THz is ~0.43 and ~2nW/√Hz, respectively.