A new characterization method for hot-carrier degradation in DMOS transistors

This paper presents an original method based on capacitance measurements, that is able to localize and estimate hot-electron-induced oxide charge in double-diffused MOS (DMOS) transistors. The method is validated by means of two-dimensional (2-D) numerical simulation. Preliminary results obtained with state-of-the-art devices are presented as example of application.