Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser

We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.