Dielectric isolated FinFETs on bulk substrate

Dielectric Isolated (DI) FinFETs exhibit superior electrostatic control compared to bulk FinFET without needing heavy sub-fin punchthrough stop doping, which increases device variability. Bottom oxidation through STI (BOTS) [1] and silicon-on-nothing (SON) are viable techniques to fabricate DI FinFETs on inexpensive bulk substates, as alternative to SOI substrate. In this paper we analyze DI FinFETs in terms of mechanical stress, transport, electrostatics and parasitic capacitances.