A simulation model for PDSOI MOSFETs

The shallow source and drain is used in the PDSOI technology. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with deep source and drain, the necessity of the new models for this device arises. A simulation model is proposed based on the 0.13μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.