High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors

Thin film transistors (TFTs) with Gadolinium-doped Aluminum-Zinc-Oxide (Gd-AZO) thin film as the active layer were fabricated on glass substrate at room temperature. Amorphous Gd-AZO crystal structure which is benefit for high performance devices was obtained. The variation trend of TFTs properties with O
₂
partial pressure was investigated. Excellent negative bias stress stability and transmittance Gd-AZO TFTs was realized, too. The ultimate TFT has excellent properties such as a saturation mobility of 238 cm
²
/V·s, an on-to-off current ratio of 6.08×10
⁸
, a threshold of 1.92V, and a sub-threshold swing of 161 mV/decade.