Bipolar resistive switching behaviors in an Al/DLC/W structure

We report the bipolar resistive switching behaviors of the Al/DLC/W structure. The fabricated device shows good memory performances with high ON/OFF ratio, long data retention time, good endurance and low operation voltage. The formed gas bubbles at the Al surface after repeated SET and RESET operations are found to arise from the oxygen vacancies by the formation of Al
₂
O
₃
layer at the DLC/Al interface, which is also responsible for the resistive switching behaviors of the device.