Predictive simulation of future CMOS technologies and their impact on circuits

We study the technology and process choices, namely Si vs. Ge PMOS FinFETs, and channel-doping approach for threshold voltage (V
TH
) control of FinFETs, at advanced technology nodes by using full-band ensemble Monte Carlo (EMC) and calibrated ‘atomistic’ Drift-Diffusion (DD) simulations. The simulation results indicate that Ge is not an ideal candidate for channel material replacement of pMOS in future low-power CMOS technologies. The impact of the channel doping approach (employed for VTH control) on overall statistical variability of FinFETs is strongly dependent on the magnitude of Fin width variation.