Analysis of time dependent current collapse in AlGaN/GaN HEMTs

We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.