A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology

This paper presents a multi-band receiver front-end IC in 90nm CMOS technology. The receiver front-end IC is switchable between a 5GHz front-end and a 60GHz front-end. The architecture of the receiver front-end IC is a direct conversion in 5GHz band and a superheterodyne in 60GHz band. For the miniaturization, the 5GHz and 60GHz front-ends share a variable gain amplifier for adjustment of power level and a quadrature mixer for frequency conversion. The multi-band (5GHz/60GHz) receiver front-end IC achieved conversion gain of 32dB with noise figure (NF) of 5dB at 5GHz band and conversion gain of 32dB with NF of 8dB at 60GHz band.