Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET

In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in In
_x
Ga
_1-x
As FinFET with varying Indium (x=0.53 , 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In
_0.7
Ga
_0.3
As QW FinFET provides better performance than In
_0.53
Ga
_0.47
As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In
_0.7
Ga
_0.3
As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 °C.