A low-voltage current reference with high immunity to EMI

An electromagnetic interference (EMI) source can significantly degrade the performance of a current reference since its finite Power Supply Rejection Ratio (PSRR) of the later. For that reason A modified current reference with high immunity to EMI and a new current mirror structure insensitive to induced EMI are proposed based on the classic boot-strapped current and compared to other current reference structures. Simulations results using XFAB 0.18 μm CMOS process demonstrate the high immunity to EMI of the proposed current reference. Improvements in the PSRR of 48dB and 32dB in comparison to the classical version and other implementations respectively.