Growth of device-quality orientation-patterned gallium phosphide (OP-GaP) by improved hydride vapour phase epitaxy

Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.