Quantum-Dot Light-Emitting Diode Featuring Polymeric Metal Oxide Anode Buffer Layer

A highly efficient quantum-dot light emitting diode (QLED) featuring polymeric and metal oxide mixture as a hole injection layer is demonstrated. The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate:tungsten oxide (PEDOT:PSS:
$\hbox{WO}_{x}$
)-based QLEDs demonstrate significantly higher performance compared to that of the PEDOT:PSS only-based QLEDs. Observations indicate that the mixture of PEDOT:PSS and
$\hbox{WO}_{x}$
are promising solution-processed hole injection materials and can create a new pathway toward the next generation of QLED lighting and displays.