Photo-Induced Electric Responses in Heterostructure of Indium Tin Oxide/(Bi1−xCax) $\mathrm{FeO}_{{\mathbf{3}}-\boldsymbol {\delta }}$ /Au

Photovoltaic effects in heterostructure of indium tin oxide (ITO)/(Bi
_{1_x}
Ca
_x
)FeO
_{3_δ}
multiferroic ceramics/Au (x = 0.0 and 0.15) have been measured under illuminations of λ = 405 and 445 nm. Open-circuit voltage (Voc), short-circuit current density (Jsc), and power conversion efficiency (η) show strong dependences on light wavelength and intensity. For λ = 405 nm, V
_oc
and J
_sc
can reach 0.62 V and 0.042 A/m
²
for BiFeO
³
(BFO), and 0.48 V and 0.30 A/m
²
for (Bi
_0.85
Ca
_0.15
)FeO
_2.925
(BFO-15%Ca) at I N 9.1×10
²
W/m
²
. The maximum power conversion efficiency for λ = 405 nm can reach η N 0.002% for BFO and η N 0.0035% for BFO-15%Ca, which are comparable with 0.0025% observed in graphene/polycrystalline BFO/Pt films. A model based on forward p-n junction, reverse p-n junction and photo-excited currents in the interface between ITO film and (Bi
_{1_x}
Ca
_x
)FeO
_{3_δ}
ceramic, was developed to describe Voc and Jsc as a function of incident light intensity. The theoretical fits agree well with experimental results. The depletion-region widths for λ = 405 nm were calculated as a function of light intensity. The calculated depletion-region widths without illumination are do N 210 nm in BFO and do N 340 nm in BFO-15%Ca.