Variations In The Gain And Bandwidth Of The MESFET Photoresponse With Bias And Optical Intensity

Exploring the photoresponse of the MESFET is important, particularly if the emphasis is on monolithic integration of optical and microwave components. An Experimental investigation and theoretical study [l] reveal that the bandwidth, gain and gain-bandwidth product [2] of the MESFETs photoresponse are dependent on the optical power density incident on the device and gate bias. These two parameters can be optimized for high gain operation or for high speed applications in microwave FO links.