Advances in reliability and operation space of high-voltage GaN power devices on Si substrates

GaN-on-Si power devices have advantages in both performance and the potential for low cost and high volume production. Advances have been made in extended reliability tests exhibiting an intrinsic life time >10
⁶
hours for qualified 600-V GaN HEMT products. Experimental kV-class devices have shown CW operation at 800V with >99% efficiency at 100 kHz and a 2:1boost ratio. Both are exciting developments reaffirming the validity of the new power semiconductor technology.