Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm
⁻¹
for partially relaxed and moderately doped Ge
0.88
Sn
0.12
.