Oscillation of spatial distribution of electric field and carrier density in p-i-n semiconductor structure

A numerical calculation of the distribution of the electric field and the carrier concentration in the p-i-n diode under forward bias, as well as experimental studies of these characteristics using near-field microwave microscope have been made. The principle importance of taking into account the dependence of diffusion coefficient of the charge carriers on the electric field in the description of the processes occurring in the p-i-n diodes has been shown. The numerical results are in qualitative agreement with experiment.