Modeling coupled lines in 65 nm CMOS for millimeter-wave applications

An analysis of the behavior of coupled lines in the 100-200 GHz frequency range is presented. Characterization of lumped and electromagnetic elements are included as a preliminary work to predict the behavior of the line in a Rotary Traveling Wave Oscillator (RTWO) integrated circuit. Using Sonnet and Agilent ADS, the simulated behavior of a coupled transmission line implemented in 65 nanometer CMOS is presented as well as the method used for modeling the lines.