0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6 Tunnel FET

In this letter, we demonstrate using fast current-voltage measurements, low switching slope of 64 mV/decade over a drain current range between 10
^-3
and 2 × 10
^-2
μA/μm in staggered-gap In
_0.65
Ga
_0.35
As/GaAs
_0.4
Sb
_0.6
tunneling field-effect transistors (TFETs) at V
_DS
= 0.5 V. This is achieved through a combination of low damage mesa sidewall etch and improvement in electrical quality of the high-κ gate-stack. Benchmarking our results against experimentally demonstrated TFETs, we conclude that, the staggered-gap TFETs are capable of achieving simultaneously high drive current and low switching slope.