Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment

In this study, titanium dioxide (TiO
₂
) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O
₂
plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO
₂
films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO
₂
PDs without and with 2 minutes O
₂
plasma treatment were 36 and 153 A/W, respectively.