Precise beam angle control in the S-UHE, SEN's single-wafer ultra-high energy ion implanter

In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE, an ultra-high energy single-wafer ion implanter. One of the most important features in the S-UHE is a precise beam angle control system to obtain stable implant depth of ion species against angle-sensitive channeling effects. It is very important for the precise control both to design a sophisticated beam line and to measure beam angles accurately. In this report, measuring techniques of the beam angle and the results are presented.