Integrated divergent beam for FinFET Conformal Doping

In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.