RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications

This paper investigates the radio frequency (RF) performance for Cylindrical Surrounding Double Gate (CSDG) MOSFETs using 3-D Device simulator. CSDG MOSFETs are evaluated for various RF parameters such as cutoff frequency F
T
, current gain, maximum power transducer gain, unilateral power gain in comparison to cylindrical surrounding gate (CSG) MOSFETs. To examine the insertion loss and leakage factor of the devices, the reflection coefficients (S
11
, S
22
) and transmission coefficients (S
12
, S
21
) are evaluated with respect to frequency. The impact of temperature variation on the performance of new device and its counterpart has also been studied in details. Results demonstrate that due to transcendent gate controllability over the channel region, the new device exhibits a remarkable cutoff frequency in THz range, higher I
ON
current and higher gains.