Silicon solar cell voltage increase based on limited area junction

A study of limited area p-n junction silicon solar cells using photoluminescence (PL) is used to demonstrate the pathways to an increase in open circuit voltage (V
_OC
). A high voltage baseline structure is used to ensure that the junction dominates the recombination. Both quasi-steady-state photo-conductance (QSSPC) and PL measurements indicate higher implied voltage on the limited p-n junction area solar cells compared to full area junction cells. This work aims at achieving more than 740 mV V
_OC
on the limited area junction structure, through optimising the passivation layers and comprehensive analysis of voltage losses throughout the structure. Various choices of passivation layers and a new structure design for separating and analysing J
₀
from each component on the limited area junction solar cell will be presented in this paper.