Induction of internal capacitance effect of organic photovoltaic device (OPV) by Real-Time One-Sweep Method (RTOSM) in I–V measurement

The characterization related features in measuring I-V curves of DSSC are having different error compare to the conventional crystalline Si (c-Si) or amorphous silicon devices. These error sources include the sample area, spectral errors, temperature fluctuations, current and voltage response time, contacting, and degradation during testing. In addition to OPV characteristics requires additional considering the forward/backward sweep in I-V curves, but the related features in measuring I-V curves are more sensitive to temperature due to non-linear issue. Therefore, in this study, we aimed to develop a new real time one sweep method (RTOSM) and applied in I-V measurement to analysis different OPV materials, which are independent on setting delay time and the forward(F)/backward(B) sweep in I-V curves. A brief discussion of photovoltaic efficiency measurements and procedures was presented, and result showed final performance data of P
_max
(I
_sc
and V
_oc
) having deviations 0.2 % or less.