Four-fold MQWs absorption enhancement in a 430 nm thick InGaAs/GaAsP MQWs solar cell

We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the quantum efficiency in the MQW region by a factor of 4 through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 9% efficiency. This promising result can be further improved by anti-reflection layers and additional light-trapping solutions.