Nonradiative recombination centers in GaAsN grown by chemical beam epitaxy

Double carrier pulse deep level transient spectroscopy was deployed to identify and characterize the recombination centers in GaAsN grown by CBE. Six electron traps, E1 to E6, with average energy depths of 0.035, 0.125, 0.160, 0.365, 0.505, and 0.710 eV, respectively below the bottom edge of the conduction band minimum were observed. The DLTS peak heights of E2 and E4 were found to decrease with simultaneous injection of majority and minority carriers in the space charge region. This result is explained by the recombination of electrons and holes via E2 and E4 centers. The recombination processes were confirmed to be nonradiative and the possible origins of these two defects were expected to be related to the N-atom.