Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

In this work, we investigate the impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation modes by numerical simulations. Simulations were performed for 10 nm gate length UTBB SOI MOSFET of 7 nm thin body (T
_si
) and 10 nm thin buried oxide (T
_BOX
) for V
_d
= 20 mV and 1.0 V. For DG operation mode, the back-gate (BG) and front-gate (FG) were swept simultaneously from 0 to 1.5 V with 10 mV incremental steps. Results reported are on key device parameters such as the threshold voltage (V
_th
), drain induced barrier lowering (DIBL), drive current (I
_on
), subthreshold swing (SS) and transconductance (g
_m
). Ground Plane (GP) - B structure which employed a p+ doping under the channel shows the best results under the DG operation mode in terms of the lowest DIBL and SS. However, it recorded a slightly higher V
_th
while the results of I
_on
and g
_m
are comparable with its other GP counterparts.