InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an L
_G
of 60 nm an extrinsic g
_m
of 1030 μS/μm at V
_ds
= 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to D
_it
resulting in an SS
_SAT
of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm L
_G
devices.