Theoretical analysis of temperature dependence of material parameters in GaAsSbN/GaAs intersubband quantum wells

The effect of temperature on the intersubband transition energy and the intersubband gain characteristics of GaAsSbN/GaAs quantum well lasers are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in gain is observed for GaAsSbN/GaAs when increasing temperature. Our calculations show that the increase in temperature causes a decrease in gain and a shift towards short wavelengths, for an increase of 150K; the gain is shifted by 4.56 μm and reduced by approximately 64.86%.