A SPICE model for perimeter-gated single photon avalanche diode

In this work a comprehensive SPICE model is demonstrated for perimeter-gated single photon avalanche diodes (PGSPAD) fabricated in commercial 0.5 μm CMOS process. This model simulates the trigger of an avalanche event of PGSPAD due to photon absorption, along with the quenching behavior. It also simulates the I-V characteristic, where the breakdown voltage can be modulated with applied gate voltage. The modeling parameters are experimentally extracted from fabricated PGSPADs. This model simulates both the static and dynamic behaviors of the device. Simulated results are validated with experimental data to demonstrate the accuracy of the model.