Wideband Active Inductor and Negative Capacitance for Broadband RF and Microwave Applications

This paper presents new structures of the active inductor and negative capacitance (NCAP) that exhibit linear impedance/admittance characteristics in a broad frequency band. To generate a frequency-independent wideband active inductor (WAI), we exploit an NCAP that reduces the effect of the shunt parasitic capacitance of the circuit. In addition, an NCAP is added to NCAP's circuit that compensates for the effects of the series parasitics and provides a wideband characteristic for the NCAP. Fabricated in 0.13-μm CMOS technology, the proposed WAI and wideband negative capacitance (WNC) exhibit frequency independent bandwidths of 7.8 and 5.2 GHz, respectively. The details for the design of a Ultra Wideband (UWB) distributed amplifier using WNC cells and a UWB phase shifter with WAI cells are also presented.