Fabrication and study of large area QHE devices based on epitaxial graphene

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and made using double metallization process. The tested devices has initial carrier concentration of 3 10
¹¹
cm
^-2
and showed half-integer quantum Hall effect at relatively low (4 T) magnetic field.