Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width

The effects of hot carrier injection on double-gate FinFETs with fin widths (W
_fin
) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow W
_fin
exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.