Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

This paper reports on gate-last (GL) In
_0.7
Ga
_0.3
As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ
_n,eff
>5,500 cm
²
/V-s at 300k). Short-channel device with L
_g
= 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g
_{m_max}
= 2 mS/μm at V
_DS
= 0.5 V. This record performance is achieved by using a low D
_it
and Al
₂
O
₃
/HfO
₂
gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.