An inclusive study on characteristics of junctionless transistor

Junctionless transistor is a new type of device without any PN or N
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N or P
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P junction. These transistors are highly scalable. A clear study on the characteristics of junctionless FET compared with all single gate, double gate, triple gate and gate all around (GAA) transistors which are uniformly doped with different structures and body thickness. The I–V Characteristics which fluctuates with change in channel length and body thickness are analysed and investigated for n-type with the help of extensive device simulations for silicon substrate material. It also describes issues in ultra-small devices, such as doping fluctuation effects.