Combine SAES/XPS and AFM investigation of nanoparticles in Zn+ and O+ ion sequentially implanted Si

Here we present the prolongation of our earlier studies [2] about of NPs formation in Si substrate by subsequently 64Zn+ and 16O+ ion implantation and thermal treatment. The Si substrates were implanted with dose of D=2×1016 cm
^-2
by 64Zn+ ions with energy of E=100 keV and 16O+ ions with energy of E=30 keV. The characterization of implanted layer and visualization of NPs formation were made by high resolution transmission electron microscopy of cross-section samples (HRTEM) and with addition of Energy Dispersive X-ray Spectroscopy (EDS) including EDS mapping using electron microscope JEM-2100 at acceleration voltage of 200 kV. The element content with profile control was determined by scan Auger electron spectroscopy (AES) using PHI-670xi unit (Physical Electronics) and X-ray photo-electron spectroscopy (XPS) using scan Multibrobe PHI-660 (Perkin-Elmer).