Fabrication and characterization of tungsten-oxide-based memristors for neuromorphic circuits

We report a fabrication process and electrical results for tungsten-oxide-based memristors compatible with CMOS-based neuromorphic circuits. Memristor crossbar arrays are fabricated on partially-processed wafers from a CMOS foundry to form hybrid FET-memristor circuits that can serve as analog memory elements for synaptic weight storage. Successful integration is demonstrated through the programming and reading of memristor crossbar array elements addressed through a CMOS multiplexer/demultiplexer.