Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique

We have realized patterned Ge-on-Insulator wafers by large-scale layer transfer technology. In conjunction with low-temperature bonding and patterned Epitaxial Lift-Off (ELO) technique, high quality Ge layer transfer was achieved in full-wafer scale.