GaAs layers grown on silicon substrates by MBE for photovoltaic application

Unijunction GaAs solar cells structures were grown on buffer GaAs/GaP/Si layers. The buffer layers were different in their crystallographic orientation ((001 or 00-1)), presence or absence of dislocation filters, also number of thermocycling operations. Solar cells without a antireflection coating were fabricated, and their characteristics were measured. Some perspective directions for improving the quality of layers GaAs/Si offered based on the experimental data and analysis of literary sources.